Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering

• 主要な著者: Hamzah, Afiq, Alias, N. Ezaila, Ismail, Razali
• フォーマット: 論文
• 出版事項: Japan Society of Applied Physics 2018
• 主題: TK Electrical engineering. Electronics Nuclear engineering
• オンライン･アクセス: http://eprints.utm.my/id/eprint/84855/; http://dx.doi.org/10.7567/JJAP.57.06KC02

The aim of this study is to investigate the memory performances of gate-all-around floating gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable oxide thickness (VARIOT) of low-k/high-k for several high-k (i.e., Si3N4, Al2O3, HfO2, and ZrO2) with low-k SiO2 using thre...