Characterization of 50 nm MOSFET with dielectric pocket

• Main Authors: Fauzan, Zul Atfyi, Saad, Ismail, Ismail, Razali
• Format: Article
• Language: English
• Published: Malaysian Institute of Physics 2007
• Subjects: TK Electrical engineering. Electronics Nuclear engineering; QC Physics
• Online Access: http://eprints.utm.my/id/eprint/8046/2/%5B093-098%5D-zul.pdf; http://eprints.utm.my/id/eprint/8046/

Characterizat ion of a metal-oxide-semi conductor field effect tran sistor incorporating dielectric pocket (DP) for suppression of short-channel effect (SCE ) is demonstrated by using 2D numerical simulation. An analysis of 120 nm and 50 nm channel length (LJ wit h DP incorp orated between the chann...