Electron microscopy analysis of microstructure of postannealed aluminum nitride template
The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template w...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Published: |
Japan Society of Applied Physics
2016
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/71617/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-84973454810&doi=10.7567%2fAPEX.9.065502&partnerID=40&md5=56c20b61c46154e7ae2e411768a0a731 |
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| Summary: | The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template was annealed under (N2 + CO) atmosphere at 1500-1650 °C. TEM characterization was conducted to investigate the microstructural evolution, revealing that the postannealed AlN has a two-layer structure, the upper and lower layers of which exhibit Al and N polarities, respectively. It has been confirmed that postannealing is an effective treatment for controlling the microstructure. |
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