Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire

The annealing of an AlN buffer layer in a carbon-saturated N2–CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650–1700 °C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy...

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Bibliographic Details
Main Authors: Miyake, Hideto, Nishio, Gou, Suzuki, Shuhei, Hiramatsu, Kazumasa, Fukuyama, Hiroyuki, Kaur, Jesbains, Kuwano, Noriyuki
Format: Article
Language:English
Published: 2016
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Online Access:http://eprints.utm.my/id/eprint/68841/1/HidetoMiyake2016_AnnealingofanAINBufferLayer.pdf
http://eprints.utm.my/id/eprint/68841/
http://iopscience.iop.org/article/10.7567/APEX.9.025501
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