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Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD

Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure...

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Main Authors: Aryanto, Didik, Othaman, Zulkafli, Ismail, A. Khamim
Format: Article
Published: Trans Tech Publications, Switzerland 2014
Subjects:
Q Science
Online Access:http://eprints.utm.my/id/eprint/52842/
https://dx.doi.org/10.4028/www.scientific.net/AMR.896.215
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spelling my.utm.528422018-07-04T11:52:19Z http://eprints.utm.my/id/eprint/52842/ Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD Aryanto, Didik Othaman, Zulkafli Ismail, A. Khamim Q Science Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure. Trans Tech Publications, Switzerland 2014 Article PeerReviewed Aryanto, Didik and Othaman, Zulkafli and Ismail, A. Khamim (2014) Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD. Advanced Materials Research, 896 . pp. 215-218. ISSN 1022-6680 https://dx.doi.org/10.4028/www.scientific.net/AMR.896.215 DOI: 10.4028/www.scientific.net/AMR.896.215
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic Q Science
spellingShingle Q Science
Aryanto, Didik
Othaman, Zulkafli
Ismail, A. Khamim
Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD
description Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure.
format Article
author Aryanto, Didik
Othaman, Zulkafli
Ismail, A. Khamim
author_facet Aryanto, Didik
Othaman, Zulkafli
Ismail, A. Khamim
author_sort Aryanto, Didik
title Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD
title_short Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD
title_full Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD
title_fullStr Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD
title_full_unstemmed Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD
title_sort fabrication and characterization of stacked self-assembled in0.5ga0.5as/gaas quantum dots grown by mocvd
publisher Trans Tech Publications, Switzerland
publishDate 2014
url http://eprints.utm.my/id/eprint/52842/
https://dx.doi.org/10.4028/www.scientific.net/AMR.896.215
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score 13.160551

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