Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD
Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure...
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| Main Authors: | , , |
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| Format: | Article |
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Trans Tech Publications, Switzerland
2014
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| Online Access: | http://eprints.utm.my/id/eprint/52842/ https://dx.doi.org/10.4028/www.scientific.net/AMR.896.215 |
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| Summary: | Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure. |
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