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Ballistic transport in nanoscale devices

Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. Equilibrium Fermi-Dirac to Boltzmann to nonequilibrium Arora distribution is delineated and...

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Main Author: Arora, Vijay Kumar
Format: Book Section
Published: Dept of Microelectronics 2012
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/34558/
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6226264
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spelling my.utm.345582017-02-02T05:04:03Z http://eprints.utm.my/id/eprint/34558/ Ballistic transport in nanoscale devices Arora, Vijay Kumar TK Electrical engineering. Electronics Nuclear engineering Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. Equilibrium Fermi-Dirac to Boltzmann to nonequilibrium Arora distribution is delineated and applied. Ballistic injection from the contacts is shown to be of paramount importance as channels scale down to lengths below the scattering-limited mean free path (mfp). Mobility and drift velocity expressions covering the wide spectrum are obtained and compared with existing experimental data. The gamut spans low to high field transport, nondegenerate to degenerate statistics, and scattering-limited stochastic to unilateral streamlined regime. Dept of Microelectronics 2012 Book Section PeerReviewed Arora, Vijay Kumar (2012) Ballistic transport in nanoscale devices. In: Proceedings of the 19th International Conference - Mixed Design of Integrated Circuits and Systems, MIXDES 2012. Dept of Microelectronics, Lodz. Poland, pp. 17-24. ISBN 978-836295443-8 http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6226264
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Arora, Vijay Kumar
Ballistic transport in nanoscale devices
description Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. Equilibrium Fermi-Dirac to Boltzmann to nonequilibrium Arora distribution is delineated and applied. Ballistic injection from the contacts is shown to be of paramount importance as channels scale down to lengths below the scattering-limited mean free path (mfp). Mobility and drift velocity expressions covering the wide spectrum are obtained and compared with existing experimental data. The gamut spans low to high field transport, nondegenerate to degenerate statistics, and scattering-limited stochastic to unilateral streamlined regime.
format Book Section
author Arora, Vijay Kumar
author_facet Arora, Vijay Kumar
author_sort Arora, Vijay Kumar
title Ballistic transport in nanoscale devices
title_short Ballistic transport in nanoscale devices
title_full Ballistic transport in nanoscale devices
title_fullStr Ballistic transport in nanoscale devices
title_full_unstemmed Ballistic transport in nanoscale devices
title_sort ballistic transport in nanoscale devices
publisher Dept of Microelectronics
publishDate 2012
url http://eprints.utm.my/id/eprint/34558/
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6226264
_version_ 1643649607811465216
score 13.160551

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