Investigation of carbon thin films by pulsed laser deposition at different temperatures
Effect of temperature on the deposition of Carbon thin Film is reported in this paper. KrF Excimer laser (248 nm, 13-50 mJ and 20 ns) is focused at an angle of 45° on pure graphite target. Silicon (111) wafer, as a substrate is placed at distance of 15 mm from the target surface. The carbon thin fil...
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my.utm.262962018-11-09T08:07:46Z http://eprints.utm.my/id/eprint/26296/ Investigation of carbon thin films by pulsed laser deposition at different temperatures Qindeel, Rabia Chaudhary, Kashif Tufail Bhatti, Khurshid Aslam Hussain, Muhammad Sakhawat Ali, Jalil Q Science Effect of temperature on the deposition of Carbon thin Film is reported in this paper. KrF Excimer laser (248 nm, 13-50 mJ and 20 ns) is focused at an angle of 45° on pure graphite target. Silicon (111) wafer, as a substrate is placed at distance of 15 mm from the target surface. The carbon thin films have been deposited at temperatures 20°C and 300°C. 10,000 pulses of KrF laser are irradiated to deposit each film under a vacuum ~ 10-4 Torr. Surface morphology is investigated by analyzing micrographs of Atomic Force Microscope (AFM). X-Ray Diffraction (XRD) and Fourier Infrared Transformation Spectroscopy (FTIR) techniques are employed for the structure analysis and to study nature of bonding of deposited thin films at different temperatures. Results obtained from techniques AFM, XRD and FTIR support each other and explain the effect of substrate temperature on carbon thin films deposited by Pulsed Laser Deposition (PLD) method. 2010 Article PeerReviewed Qindeel, Rabia and Chaudhary, Kashif Tufail and Bhatti, Khurshid Aslam and Hussain, Muhammad Sakhawat and Ali, Jalil (2010) Investigation of carbon thin films by pulsed laser deposition at different temperatures. Journal of Non - Oxide Glasses, 1 (4). pp. 191-197. ISSN 2605-6874 |
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Q Science Qindeel, Rabia Chaudhary, Kashif Tufail Bhatti, Khurshid Aslam Hussain, Muhammad Sakhawat Ali, Jalil Investigation of carbon thin films by pulsed laser deposition at different temperatures |
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Effect of temperature on the deposition of Carbon thin Film is reported in this paper. KrF Excimer laser (248 nm, 13-50 mJ and 20 ns) is focused at an angle of 45° on pure graphite target. Silicon (111) wafer, as a substrate is placed at distance of 15 mm from the target surface. The carbon thin films have been deposited at temperatures 20°C and 300°C. 10,000 pulses of KrF laser are irradiated to deposit each film under a vacuum ~ 10-4 Torr. Surface morphology is investigated by analyzing micrographs of Atomic Force Microscope (AFM). X-Ray Diffraction (XRD) and Fourier Infrared Transformation Spectroscopy (FTIR) techniques are employed for the structure analysis and to study nature of bonding of deposited thin films at different temperatures. Results obtained from techniques AFM, XRD and FTIR support each other and explain the effect of substrate temperature on carbon thin films deposited by Pulsed Laser Deposition (PLD) method. |
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Article |
author |
Qindeel, Rabia Chaudhary, Kashif Tufail Bhatti, Khurshid Aslam Hussain, Muhammad Sakhawat Ali, Jalil |
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Qindeel, Rabia Chaudhary, Kashif Tufail Bhatti, Khurshid Aslam Hussain, Muhammad Sakhawat Ali, Jalil |
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Qindeel, Rabia |
title |
Investigation of carbon thin films by pulsed laser deposition at different temperatures |
title_short |
Investigation of carbon thin films by pulsed laser deposition at different temperatures |
title_full |
Investigation of carbon thin films by pulsed laser deposition at different temperatures |
title_fullStr |
Investigation of carbon thin films by pulsed laser deposition at different temperatures |
title_full_unstemmed |
Investigation of carbon thin films by pulsed laser deposition at different temperatures |
title_sort |
investigation of carbon thin films by pulsed laser deposition at different temperatures |
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2010 |
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http://eprints.utm.my/id/eprint/26296/ |
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1643647734637395968 |
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13.2014675 |