Investigation of carbon thin films by pulsed laser deposition at different temperatures
Effect of temperature on the deposition of Carbon thin Film is reported in this paper. KrF Excimer laser (248 nm, 13-50 mJ and 20 ns) is focused at an angle of 45° on pure graphite target. Silicon (111) wafer, as a substrate is placed at distance of 15 mm from the target surface. The carbon thin fil...
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/26296/ |
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| Summary: | Effect of temperature on the deposition of Carbon thin Film is reported in this paper. KrF Excimer laser (248 nm, 13-50 mJ and 20 ns) is focused at an angle of 45° on pure graphite target. Silicon (111) wafer, as a substrate is placed at distance of 15 mm from the target surface. The carbon thin films have been deposited at temperatures 20°C and 300°C. 10,000 pulses of KrF laser are irradiated to deposit each film under a vacuum ~ 10-4 Torr. Surface morphology is investigated by analyzing micrographs of Atomic Force Microscope (AFM). X-Ray Diffraction (XRD) and Fourier Infrared Transformation Spectroscopy (FTIR) techniques are employed for the structure analysis and to study nature of bonding of deposited thin films at different temperatures. Results obtained from techniques AFM, XRD and FTIR support each other and explain the effect of substrate temperature on carbon thin films deposited by Pulsed Laser Deposition (PLD) method. |
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