Analytical study of carriers in silicon nanowires

The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift v...

Full description

Saved in:
Bibliographic Details
Main Authors: Ahmadi, Mohammad Taghi, Fallahpour, Amir Hossein, Allahdadian, Javad, Kouhnavard, Mojgan, Ismail, Razali
Format: Article
Published: 2009
Subjects:
Online Access:http://eprints.utm.my/id/eprint/13682/
https://www.researchgate.net/publication/260835448_Analytical_Study_of_Carriers_in_Silicon_NanoWires
Tags: Add Tag
No Tags, Be the first to tag this record!