Analytical study of drift velocity in N-type silicon nanowires
The limitations on carrier drift velocity due to high-field effect and randomly velocity vector in equilibrium is reported. The results are based on asymmetrical distribution function that converts randomness velocity vectors in zerofield to streamlined one in a very high electric field. The ultimat...
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| Main Authors: | , , |
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| Format: | Book Section |
| Published: |
IEEE Explore
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/13079/ http://dx.doi.org/10.1109/ASQED.2009.5206261 |
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