Analytical study of carriers in silicon nanowires

• Main Authors: Ahmadi, Mohammad Taghi, Fallahpour, Amir Hossein, Allahdadian, Javad, Kouhnavard, Mojgan, Ismail, Razali
• Format: Article
• Published: 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/13682/; https://www.researchgate.net/publication/260835448_Analytical_Study_of_Carriers_in_Silicon_NanoWires

The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures. Quantum and high-field effects controlling the transport of carrier in nanostructures are described. The results obtained are applied to the modeling of a nanowire transistor