Optical band gap and surface morphology of AlN thin-film sputtered by HiPIMS on glass substrate
Aluminium Nitride (AlN) thin-film on glass substrate were prepared by HiPIMS at different Ar to N2 ratio. The XRD pattern revealed the amorphous structure of AlN as compared to AlN on Si substrate. The optical band gap of AlN on glass derived from Tauc plot shows the optical band gap was inversely p...
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| Main Authors: | , , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2023
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| Subjects: | |
| Online Access: | http://eprints.utm.my/108228/ http://dx.doi.org/10.1063/5.0124192 |
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| Summary: | Aluminium Nitride (AlN) thin-film on glass substrate were prepared by HiPIMS at different Ar to N2 ratio. The XRD pattern revealed the amorphous structure of AlN as compared to AlN on Si substrate. The optical band gap of AlN on glass derived from Tauc plot shows the optical band gap was inversely proportional to the N2 concentration where 3.90 eV for 50% N2 and 3.95 eV for 33% N2. The surface roughness for all samples were below than 2 nm where the lowest at 1.5:1 of Ar: N2 at 1.28 nm. Water contact angle shows the hydrophobic behaviour for all samples which shows the potential to be used in the transparent coating application. |
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