Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties

• Main Authors: Azman, Zulkifli, Nayan, Nafarizal, Megat Hasnan, Megat Muhammad Ikhsan, Abu Bakar, Ahmad Shuhaimi, Mamat, Mohamad Hafiz, Mohd. Yusop, Mohd. Zamri
• Format: Article
• Published: Inderscience Publishers 2022
• Subjects: TJ Mechanical engineering and machinery
• Online Access: http://eprints.utm.my/id/eprint/101370/; http://dx.doi.org/10.1504/IJNT.2022.124519

The effects of variation of sputtering pressure of AlN HiPIMS deposition on Si substrate to the structure and electrical properties were investigated through XRD, AFM and impedance spectroscopy method. The strong preferred 100-plane AlN was observed for all samples from XRD pattern. The AlN thin fil...