Optimal Design Of Junctionless Double Gate Vertical MOSFET Using Hybrid Taguchi-GRA With ANN Prediction
Random parameter variations have been an influential factor that deciding the performance of a metal-oxide-semiconductor field effect transistor (MOSFET), especially in nano-scale regime. Thus, controlling the variation of those parameters becomes extremely crucial in order to attain an acceptable p...
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Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Penerbit UMP
2019
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Online Access: | http://eprints.utem.edu.my/id/eprint/24268/2/KEKAHARUDIN-JMES-SEPT2019.PDF http://eprints.utem.edu.my/id/eprint/24268/ https://journal.ump.edu.my/jmes/article/view/441/476 https://doi.org/10.15282/jmes.13.3.2019.16.0442 |
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