Fault Analysis And Test For Bridge Defect In Resistive Random Access Memory

• Main Author: Arshad, Norsuhaidah
• Format: Thesis
• Language: English; English
• Published: 2016
• Subjects: T Technology (General); TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utem.edu.my/id/eprint/18373/1/Fault%20Analysis%20And%20Test%20For%20Bridge%20Defect%20In%20Resistive%20Random%20Access%20Memory.pdf; http://eprints.utem.edu.my/id/eprint/18373/2/Fault%20Analysis%20And%20Test%20For%20Bridge%20Defect%20In%20Resistive%20Random%20Access%20Memory.pdf; http://eprints.utem.edu.my/id/eprint/18373/; https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=100175

Resistive Random-Access Memory (ReRAM) is one of the potential candidates of emerging semiconductor memory to replace the conventional memory technologies.Besides, ReRAM offers many attractive advantages, such as non-volatile, scalable, low power consumption, and fast data access. Due to the infancy...