A New Test Scheme for Process Variation-Induced Faults in Resistive RAMs
Resistive random access memory (RRAM) is vying to be one of the main universal memories for computing systems. Nonetheless, due to infancy knowledge and technology to fabrication RRAM, this emerging memory technology is expected to be impacted by processvariation-induced faults. Due to their varying...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/10555/1/43-50_AJBAS_Nov13.pdf http://eprints.utem.edu.my/id/eprint/10555/ |
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