Effect Of pH On Tungsten Removal From Chemical Mechanical Polishing (CMP) Slurry Using Dowex Marathon C Resin Of Ion Exchange

• Main Author: Ahmad, Nur Husni
• Format: Monograph
• Language: English
• Published: Universiti Sains Malaysia 2018
• Subjects: T Technology; TP Chemical Technology
• Online Access: http://eprints.usm.my/53690/1/Effect%20Of%20pH%20On%20Tungsten%20Removal%20From%20Chemical%20Mechanical%20Polishing%20%28CMP%29%20Slurry%20Using%20Dowex%20Marathon%20C%20Resin%20Of%20Ion%20Exchang_Nur%20Husni%20Ahmad_K4_2018.pdf; http://eprints.usm.my/53690/

The chemical mechanical polishing slurry is widely used in the semiconductor industry as a polishing agent to polish the surface of wafer. The polishing process involve the chemical and mechanical action to remove the modified layer on the surface of the wafer by tungsten slurry. The recovery of the...