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Effect Of pH On Tungsten Removal From Chemical Mechanical Polishing (CMP) Slurry Using Dowex Marathon C Resin Of Ion Exchange

The chemical mechanical polishing slurry is widely used in the semiconductor industry as a polishing agent to polish the surface of wafer. The polishing process involve the chemical and mechanical action to remove the modified layer on the surface of the wafer by tungsten slurry. The recovery of the...

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Bibliographic Details
Main Author: Ahmad, Nur Husni
Format: Monograph
Language:English
Published: Universiti Sains Malaysia 2018
Subjects:
T Technology
TP Chemical Technology
Online Access:http://eprints.usm.my/53690/1/Effect%20Of%20pH%20On%20Tungsten%20Removal%20From%20Chemical%20Mechanical%20Polishing%20%28CMP%29%20Slurry%20Using%20Dowex%20Marathon%20C%20Resin%20Of%20Ion%20Exchang_Nur%20Husni%20Ahmad_K4_2018.pdf
http://eprints.usm.my/53690/
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http://eprints.usm.my/53690/1/Effect%20Of%20pH%20On%20Tungsten%20Removal%20From%20Chemical%20Mechanical%20Polishing%20%28CMP%29%20Slurry%20Using%20Dowex%20Marathon%20C%20Resin%20Of%20Ion%20Exchang_Nur%20Husni%20Ahmad_K4_2018.pdf
http://eprints.usm.my/53690/

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