The Growth Of Aln Single Layer On Sapphire At Low Pressure Using Metalorganic Chemical Vapor Deposition (MOCVD)

• Main Authors: Sahar, Mohd Ann Amirul Zulffiqal Md, Hassan, Zainuriah, Way, Foong Lim, Samsudin, M. E. A., Hanafiah, A. M., Yusuf, Yusnizam, Ahmad, M. A., Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd
• Format: Conference or Workshop Item
• Language: English
• Published: 2019
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/48843/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20108.pdf; http://eprints.usm.my/48843/

In this work, AlN single layer has been successfully grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at low reactor pressure. The effects of growth temperature, ammonia (NH3) flux and trimethylaluminum (TMAl) flux towards AlN growth were investigated. It was noted that...