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Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography

Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH)...

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Main Author: Abdullah, Ahmad Makarimi
Format: Thesis
Language:English
Published: 2012
Subjects:
TN1-997 Mining engineering. Metallurgy
Online Access:http://eprints.usm.my/41348/1/AHMAD_MAKARIMI_ABDULLAH.pdf
http://eprints.usm.my/41348/
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spelling my.usm.eprints.41348 http://eprints.usm.my/41348/ Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography Abdullah, Ahmad Makarimi TN1-997 Mining engineering. Metallurgy Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), nitric acid (HNO3) and Di-Ionize water (DIW) and diluted hydrofluoric acid (HF) to remove the organic, inorganic contaminants and native oxide from the wafer surface. A non-contact AFM mode was chosen to perform the AFM lithography process on pre-cleaned SOI wafer. The SiNWT structure was designed by using raster programming. A conductive AFM tip (Cr/Pt cantilever tip) was used to fabricate SiNWT patterns on the SOI surface based on pre-designed structures. 2012-04 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41348/1/AHMAD_MAKARIMI_ABDULLAH.pdf Abdullah, Ahmad Makarimi (2012) Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic TN1-997 Mining engineering. Metallurgy
spellingShingle TN1-997 Mining engineering. Metallurgy
Abdullah, Ahmad Makarimi
Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
description Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), nitric acid (HNO3) and Di-Ionize water (DIW) and diluted hydrofluoric acid (HF) to remove the organic, inorganic contaminants and native oxide from the wafer surface. A non-contact AFM mode was chosen to perform the AFM lithography process on pre-cleaned SOI wafer. The SiNWT structure was designed by using raster programming. A conductive AFM tip (Cr/Pt cantilever tip) was used to fabricate SiNWT patterns on the SOI surface based on pre-designed structures.
format Thesis
author Abdullah, Ahmad Makarimi
author_facet Abdullah, Ahmad Makarimi
author_sort Abdullah, Ahmad Makarimi
title Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
title_short Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
title_full Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
title_fullStr Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
title_full_unstemmed Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
title_sort optimization of potassium hydroxide (koh) etching on the fabrication of p-type silicon nanowire transistor patterned by atomic force microscopy lithography
publishDate 2012
url http://eprints.usm.my/41348/1/AHMAD_MAKARIMI_ABDULLAH.pdf
http://eprints.usm.my/41348/
_version_ 1643710196290158592
score 13.160551

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