Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH)...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2012
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/41348/1/AHMAD_MAKARIMI_ABDULLAH.pdf http://eprints.usm.my/41348/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), nitric acid (HNO3) and Di-Ionize water (DIW) and diluted hydrofluoric acid (HF) to remove the organic, inorganic contaminants and native oxide from the wafer surface. A non-contact AFM mode was chosen to perform the AFM lithography process on pre-cleaned SOI wafer. The SiNWT structure was designed by using raster programming. A conductive AFM tip (Cr/Pt cantilever tip) was used to fabricate SiNWT patterns on the SOI surface based on pre-designed structures. |
|---|