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Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.

Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm. Filem nipis Si02 tersadur anod telah ditumbuhkankan di atas substrat silikon (Si) jenis p dan n serta silikon karbida jenis-p de...

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Main Authors: Cheong, Kuan Yew, Purwadaria, Sunara, Lockman, Zainovia
Format: Monograph
Published: Universiti Sains Malaysia 2008
Subjects:
TN1-997 Mining engineering. Metallurgy
Online Access:http://eprints.usm.my/10152/
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id my.usm.eprints.10152
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spelling my.usm.eprints.10152 http://eprints.usm.my/10152/ Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. Cheong, Kuan Yew Purwadaria, Sunara Lockman, Zainovia TN1-997 Mining engineering. Metallurgy Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm. Filem nipis Si02 tersadur anod telah ditumbuhkankan di atas substrat silikon (Si) jenis p dan n serta silikon karbida jenis-p dengan ketebalan dalam julat 50-130. Universiti Sains Malaysia 2008 Monograph NonPeerReviewed Cheong, Kuan Yew and Purwadaria, Sunara and Lockman, Zainovia (2008) Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. Project Report. Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
topic TN1-997 Mining engineering. Metallurgy
spellingShingle TN1-997 Mining engineering. Metallurgy
Cheong, Kuan Yew
Purwadaria, Sunara
Lockman, Zainovia
Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
description Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm. Filem nipis Si02 tersadur anod telah ditumbuhkankan di atas substrat silikon (Si) jenis p dan n serta silikon karbida jenis-p dengan ketebalan dalam julat 50-130.
format Monograph
author Cheong, Kuan Yew
Purwadaria, Sunara
Lockman, Zainovia
author_facet Cheong, Kuan Yew
Purwadaria, Sunara
Lockman, Zainovia
author_sort Cheong, Kuan Yew
title Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
title_short Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
title_full Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
title_fullStr Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
title_full_unstemmed Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
title_sort development of si02 thin film on singlecrystal sic by anodic oxidation technique.
publisher Universiti Sains Malaysia
publishDate 2008
url http://eprints.usm.my/10152/
_version_ 1643701461385740288
score 13.160551

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