Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.

• Main Authors: Jeong, Hyun Moon, Kuan, Yew Cheong, Ho, Keun Song, Jeong, Hyuk Yim, Myeong, Suk Oh, Jong, Ho Lee, Bahng, Wook, Nam, Kyun Kim, Hyeong, Joon Kim
• Format: Conference or Workshop Item
• Language: English
• Published: 2007
• Subjects: TN1-997 Mining engineering. Metallurgy
• Online Access: http://eprints.usm.my/13610/1/Effect_of_nitric.pdf; http://eprints.usm.my/13610/

Metal-Oxide-Semiconductor FETs using 4H-SiC have been investigated intensively because 4H-SiC semiconductor has excellent physical properties for power-device applications.