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Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K

The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room tempe...

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Main Authors: Marshall, A.R.J., Vines, P., Ker, P.J., David, J.P.R., Tan, C.H.
Format: Article
Language:en_US
Published: 2017
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spelling my.uniten.dspace-59932018-02-07T08:23:30Z Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K Marshall, A.R.J. Vines, P. Ker, P.J. David, J.P.R. Tan, C.H. The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled. © 2011 IEEE. 2017-12-08T07:48:17Z 2017-12-08T07:48:17Z 2011 Article 10.1109/JQE.2011.2128299 en_US Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K. IEEE Journal of Quantum Electronics, 47(6), 858-864. [5764939]
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
language en_US
description The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled. © 2011 IEEE.
format Article
author Marshall, A.R.J.
Vines, P.
Ker, P.J.
David, J.P.R.
Tan, C.H.
spellingShingle Marshall, A.R.J.
Vines, P.
Ker, P.J.
David, J.P.R.
Tan, C.H.
Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K
author_facet Marshall, A.R.J.
Vines, P.
Ker, P.J.
David, J.P.R.
Tan, C.H.
author_sort Marshall, A.R.J.
title Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K
title_short Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K
title_full Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K
title_fullStr Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K
title_full_unstemmed Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K
title_sort avalanche multiplication and excess noise in inas electron avalanche photodiodes at 77 k
publishDate 2017
_version_ 1644493817634619392
score 13.222552

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