Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes

• 主要な著者: Ker, P.J., David, J.P.R., Tan, C.H.
• フォーマット: 論文
• 言語: en_US
• 出版事項: 2017

Measurement and analysis of the temperature dependence of avalanche gain and excess noise in InAs electron avalanche photodiodes (eAPDs) at 77 to 250 K are reported. The avalanche gain, initiated by pure electron injection, was found to reduce with decreasing temperature. However no significant chan...