Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes
Measurement and analysis of the temperature dependence of avalanche gain and excess noise in InAs electron avalanche photodiodes (eAPDs) at 77 to 250 K are reported. The avalanche gain, initiated by pure electron injection, was found to reduce with decreasing temperature. However no significant chan...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2017
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