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Effect of wafer thinning methods towards fracture strength and topography of silicon die

This paper characterizes die damage resulting from various wafer thinning processes. Die fracture strength is measured using ball breaker test with respect to die surface finish. Further study on surface roughness and topography of each surface finish is obtained by atomic force microscopy (AFM) and...

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Main Authors: Jiun, H.H., Ahmad, I., Jalar, A., Omar, G.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5317
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spelling my.uniten.dspace-53172017-11-15T02:57:30Z Effect of wafer thinning methods towards fracture strength and topography of silicon die Jiun, H.H. Ahmad, I. Jalar, A. Omar, G. This paper characterizes die damage resulting from various wafer thinning processes. Die fracture strength is measured using ball breaker test with respect to die surface finish. Further study on surface roughness and topography of each surface finish is obtained by atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. Stress relief process with 25 μm removal is able to strengthen 100 μm wafer by 20.4% using chemical wet etch and 75 μm wafer by 36.4% with plasma etch. Relatively, plasma etching shows higher fracture strength and flexibility compared to chemical wet etch. This is due to topography of the finished surface of plasma etch is smoother and rounded, leading to a reduced stress concentration, hence improved fracture strength. © 2005 Elsevier Ltd. All rights reserved. 2017-11-15T02:57:30Z 2017-11-15T02:57:30Z 2006 http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5317
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description This paper characterizes die damage resulting from various wafer thinning processes. Die fracture strength is measured using ball breaker test with respect to die surface finish. Further study on surface roughness and topography of each surface finish is obtained by atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. Stress relief process with 25 μm removal is able to strengthen 100 μm wafer by 20.4% using chemical wet etch and 75 μm wafer by 36.4% with plasma etch. Relatively, plasma etching shows higher fracture strength and flexibility compared to chemical wet etch. This is due to topography of the finished surface of plasma etch is smoother and rounded, leading to a reduced stress concentration, hence improved fracture strength. © 2005 Elsevier Ltd. All rights reserved.
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author Jiun, H.H.
Ahmad, I.
Jalar, A.
Omar, G.
spellingShingle Jiun, H.H.
Ahmad, I.
Jalar, A.
Omar, G.
Effect of wafer thinning methods towards fracture strength and topography of silicon die
author_facet Jiun, H.H.
Ahmad, I.
Jalar, A.
Omar, G.
author_sort Jiun, H.H.
title Effect of wafer thinning methods towards fracture strength and topography of silicon die
title_short Effect of wafer thinning methods towards fracture strength and topography of silicon die
title_full Effect of wafer thinning methods towards fracture strength and topography of silicon die
title_fullStr Effect of wafer thinning methods towards fracture strength and topography of silicon die
title_full_unstemmed Effect of wafer thinning methods towards fracture strength and topography of silicon die
title_sort effect of wafer thinning methods towards fracture strength and topography of silicon die
publishDate 2017
url http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5317
_version_ 1644493655692541952
score 13.214268

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