Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method

• Main Authors: Salehuddin, F., Ahmad, I., Hamid, F.A., Zaharim, A., Elgomati, H.A., Majlis, B.Y., Apte, P.R.
• Published: 2017
• Online Access: http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5242

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process param...