Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method

• Main Authors: Fauziyah, Salehuddin, Ahmad, Ibrahim, Azlee Hamid, Fazrena, Zaharim, Azami, Elgomati, Husam Ahmed, Majlis, Burhanuddin Yeop, Apte, Prakash R.
• Format: Article
• Language: English
• Published: International Journal of Engineering and Applied Sciences 2011
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utem.edu.my/id/eprint/4194/1/%28J5%29_JEAS_7%282%29_80-86_zie.pdf; http://eprints.utem.edu.my/id/eprint/4194/; http://www.waset.org/journals/ijeas/

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process param...