Taguchi optimization of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The objective of this paper is to optimize the process parameters for a SOI-based lateral PIN...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2017
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| Online Access: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5215 |
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