Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method

• Main Authors: Afifah Maheran, A.H., Menon, P.S., Ahmad, I., Shaari, S.
• Published: 2017
• Online Access: http://dspace.uniten.edu.my:80/jspui/handle/123456789/5207

In this article, Taguchi orthogonal array method was used to optimize the process parameters during the design of a 22 nm n-type Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in order to decrease the leakage current (ILEAK) of the device. Titanium dioxide (TiO2) was used as the dielectr...