Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode
A high performance lateral silicon photodiode was designed on a Silicon-on-insulator (SOI)-based substrate with SiGe/Si quantum dot technology. The device has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. Five device p...
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| Main Authors: | , , , |
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| Format: | Conference Proceeding |
| Language: | English |
| Published: |
2017
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