Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi method

• Main Authors: Afifah Maheran, A.H., Menon, P.S., Ahmad, I., Salehuddin, F., Mohd, A.S., Noor, Z.A., Elgomati, H.A.
• Format: Article
• Language: English
• Published: 2017

In this article, Taguchi method was used to optimize the control factor in obtaining the optimal value which is also known as response characteristics, where the threshold voltage (Vth) and leakage current (Ileak) for NMOS transistor with a gate length of 22 nm is taken into account. The NMOS transi...