High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe...
Saved in:
Main Authors: | Menon P.S., Tasirin S.K., Ahmad I., Abdullah S.F. |
---|---|
Other Authors: | 57201289731 |
Format: | Conference paper |
Published: |
2023
|
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array
by: Menon P.S., et al.
Published: (2023) -
Xenon flash lamp annealing of large area silicon photodetector
by: Raid, A. Ismail, et al.
Published: (2016) -
Study of intersubband transitions in Si1-xGex/Si quantum wells using 14-band k⋅p model
by: Liu, W., et al.
Published: (2008) -
Taguchi optimization of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
by: Menon P.S., et al.
Published: (2023) -
Investigated optical studies of Si quantum dot
by: Y., Al-Douri, et al.
Published: (2011)