High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well

• Main Authors: Menon P.S., Tasirin S.K., Ahmad I., Abdullah S.F.
• Other Authors: 57201289731
• Format: Conference paper
• Published: 2023
• Subjects: PIN photodiode; SiGe/Si multi quantum well (MQW); Silvaco; SOI; Diodes; Frequency response; Photodiodes; Active-absorption; Design parameters; Lateral PIN photodiodes; Layer thickness; Multi-quantum well structures; Multiquantum wells; Optical power; Photoabsorptions; Pin photodiode; Responsivity; Sensing applications; Si(1 0 0); SiGe quantum wells; SiGe/Si; Silicon-on-insulators; Wavelength ranges; Semiconductor quantum wells

Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe/Si multi-quantum well structure. In this paper, 5 periods of stacked SiGe quantum wells were grown on Si(100). A lateral PIN photodiode consisting of the SiGe/Si multi-quantum well layers as the active absorption layer with intensity response in the 700-1600 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.89 A/W, 71% and 21 GHz respectively for design parameters of intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the SiGe/Si multi-quantum well solution in achieving the desired high performance photodiode was achieved. � 2012 IEEE.