Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi method

• Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
• Other Authors: 36239165300
• Format: Conference Paper
• Published: 2023
• Subjects: Cobalt salicide; Optimizations of 45nm CMOS; Silvaco; Taguchi method; CMOS integrated circuits; Cobalt; Cobalt compounds; Design; Optimization; Semiconductor growth; Silicides; Taguchi methods; Threshold voltage; Anneal temperatures; CMOS technology; Design time; Design tool; Electrical characterization; Experimental data; Halo implantation; NMOS devices; Optimal process; Optimizers; Oxide growth; PMOS devices; Process parameters; Response characteristic; Taguchi; MOS devices

Taguchi method was used to analyze the experimental data in order to get the optimum average of silicide thickness in 45nm devices. The virtually fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS modul...