Characterization and optimizations of silicide thickness in 45nm pMOS device

• Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
• Other Authors: 36239165300
• Format: Conference Paper
• Published: 2023
• Subjects: 45nm pMOS; Cobalt salicide; Optimization; Taguchi method; Cobalt; Cobalt compounds; Polysilicon; Semiconductor devices; Semiconductor growth; Silicides; Taguchi methods; Thermoelectric equipment; Anneal temperatures; Experimental data; Gate electrode resistance; Halo implantation; International Technology Roadmap for Semiconductors; Optimum solution; Oxide growth; PMOS devices; Poly-si gates; Electron devices

The characteristics of high performance 45nm pMOS devices based on International Technology Roadmap for Semiconductor (ITRS) have been studied using ATHENA and ATLAS's simulator. There are four factors were varied for 3 levels to perform 9 experiments. The factors are halo implantation, Source/...