An approximate method for solving unsteady transitional and rarefied flow regimes in pulsed pressure chemical vapor deposition process using the quiet direct simulation method

The Quiet Direct Simulation (QDS) method is a kinetic-based flux scheme that computes true-direction fluxes of mass, momentum and energy with high computational efficiency. In QDS, the molecular velocity is represented by the Maxwell-Boltzmann equilibrium distribution approximated by a Gauss-Hermite...

Full description

Saved in:
Bibliographic Details
Main Authors: Lim C.W., Cave H.M., Jermy M.C., Krumdieck S.P., Wu J.-S.
Other Authors: 35722335000
Format: Conference Paper
Published: 2023
Subjects:
CFD
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.uniten.dspace-29609
record_format dspace
spelling my.uniten.dspace-296092024-04-17T10:45:53Z An approximate method for solving unsteady transitional and rarefied flow regimes in pulsed pressure chemical vapor deposition process using the quiet direct simulation method Lim C.W. Cave H.M. Jermy M.C. Krumdieck S.P. Wu J.-S. 35722335000 8949775600 6603348158 6601976510 23669619500 CFD Kinetic theory method Low pressure flow Quiet Direct Simulation (QDS) Unsteady flow The Quiet Direct Simulation (QDS) method is a kinetic-based flux scheme that computes true-direction fluxes of mass, momentum and energy with high computational efficiency. In QDS, the molecular velocity is represented by the Maxwell-Boltzmann equilibrium distribution approximated by a Gauss-Hermite quadrature. The QDS algorithm is suitable for parallelization with its highly local nature. In this paper, the QDS method is used to simulate highly unsteady low pressure flows encountered in a Pulsed Pressure Chemical Vapor Deposition (PP-CVD) reactor. Two simulations were conducted to study the PP-CVD reactor flow field at 1Pa and 1kPa reactor base pressures. The time required to establish the quasi-steady under-expanded jet is found to be ?5ms, and the jet dissipates within 1ms of the end of injection. Simulation results also show uniform molecular arrival at the depositing substrate surface to promote uniform deposition. This important information is important to set up PP-CVD operating conditions as well as the reactor design. The assumption of the local Maxwell-Boltzmann equilibrium distribution used in the QDS scheme is then verified by examining the gradient length local Knudsen number based on the density, and by estimating the average number of particles collisions within each computational cell in one computational time step. The validity of local equilibrium assumption is found satisfactory at 1kPa reactor based pressure but not at 1Pa. However, the similarity of flow phenomena in both simulations suggests QDS to be a quick approximation method for low pressure flow simulations. � 2011 American Institute of Physics. Final 2023-12-28T07:05:48Z 2023-12-28T07:05:48Z 2011 Conference Paper 10.1063/1.3562782 2-s2.0-80054039668 https://www.scopus.com/inward/record.uri?eid=2-s2.0-80054039668&doi=10.1063%2f1.3562782&partnerID=40&md5=cc99704c51d66f44016f81d75fb4ea01 https://irepository.uniten.edu.my/handle/123456789/29609 1333 PART 1 1039 1044 All Open Access; Bronze Open Access Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic CFD
Kinetic theory method
Low pressure flow
Quiet Direct Simulation (QDS)
Unsteady flow
spellingShingle CFD
Kinetic theory method
Low pressure flow
Quiet Direct Simulation (QDS)
Unsteady flow
Lim C.W.
Cave H.M.
Jermy M.C.
Krumdieck S.P.
Wu J.-S.
An approximate method for solving unsteady transitional and rarefied flow regimes in pulsed pressure chemical vapor deposition process using the quiet direct simulation method
description The Quiet Direct Simulation (QDS) method is a kinetic-based flux scheme that computes true-direction fluxes of mass, momentum and energy with high computational efficiency. In QDS, the molecular velocity is represented by the Maxwell-Boltzmann equilibrium distribution approximated by a Gauss-Hermite quadrature. The QDS algorithm is suitable for parallelization with its highly local nature. In this paper, the QDS method is used to simulate highly unsteady low pressure flows encountered in a Pulsed Pressure Chemical Vapor Deposition (PP-CVD) reactor. Two simulations were conducted to study the PP-CVD reactor flow field at 1Pa and 1kPa reactor base pressures. The time required to establish the quasi-steady under-expanded jet is found to be ?5ms, and the jet dissipates within 1ms of the end of injection. Simulation results also show uniform molecular arrival at the depositing substrate surface to promote uniform deposition. This important information is important to set up PP-CVD operating conditions as well as the reactor design. The assumption of the local Maxwell-Boltzmann equilibrium distribution used in the QDS scheme is then verified by examining the gradient length local Knudsen number based on the density, and by estimating the average number of particles collisions within each computational cell in one computational time step. The validity of local equilibrium assumption is found satisfactory at 1kPa reactor based pressure but not at 1Pa. However, the similarity of flow phenomena in both simulations suggests QDS to be a quick approximation method for low pressure flow simulations. � 2011 American Institute of Physics.
author2 35722335000
author_facet 35722335000
Lim C.W.
Cave H.M.
Jermy M.C.
Krumdieck S.P.
Wu J.-S.
format Conference Paper
author Lim C.W.
Cave H.M.
Jermy M.C.
Krumdieck S.P.
Wu J.-S.
author_sort Lim C.W.
title An approximate method for solving unsteady transitional and rarefied flow regimes in pulsed pressure chemical vapor deposition process using the quiet direct simulation method
title_short An approximate method for solving unsteady transitional and rarefied flow regimes in pulsed pressure chemical vapor deposition process using the quiet direct simulation method
title_full An approximate method for solving unsteady transitional and rarefied flow regimes in pulsed pressure chemical vapor deposition process using the quiet direct simulation method
title_fullStr An approximate method for solving unsteady transitional and rarefied flow regimes in pulsed pressure chemical vapor deposition process using the quiet direct simulation method
title_full_unstemmed An approximate method for solving unsteady transitional and rarefied flow regimes in pulsed pressure chemical vapor deposition process using the quiet direct simulation method
title_sort approximate method for solving unsteady transitional and rarefied flow regimes in pulsed pressure chemical vapor deposition process using the quiet direct simulation method
publishDate 2023
_version_ 1806425960727183360
score 13.214268