Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

• Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Hashim U., Apte P.R.
• Other Authors: 36239165300
• Format: Article
• Published: 2023
• Subjects: Analysis of variance; Control factor; Device simulation; Process simulation; Taguchi method

In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance cha...