Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array

In this study, orthogonal array of L18 in Taguchi method was used to optimize the process parameters variance on threshold voltage (V TH) in 45nm p-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed...

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Bibliographic Details
Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Hamid A.M.A., Menon P.S., Elgomati H.A., Majlis B.Y., Apte P.R.
Other Authors: 36239165300
Format: Conference paper
Published: 2023
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