High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control
High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive...
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2023
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my.uniten.dspace-241982023-05-29T14:56:48Z High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control Mah S.K. Ahmad I. Ker P.J. Noor Faizah Z.A. 57191706660 12792216600 37461740800 56395444600 High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive current (ION) and low IOFF gives a high on-off current ratio (ION/IOFF), which leads to a faster switching speed for the N-type Metal Oxide Semiconductor Field Effect Transistor (NMOS). In order to achieve the best ION/IOFF ratio for a predetermined range of VTH, halo implant was used to adjust the threshold voltage. The finding shows that optimum VTH and ION/IOFF ratio can be achieved by selecting the most suitable halo implant dose in a virtually fabricated 14nm gate-length La2O3-based NMOS device with varying high-k dielectric oxide thickness. � 2018 Universiti Teknikal Malaysia Melaka. All rights reserved. Final 2023-05-29T06:56:48Z 2023-05-29T06:56:48Z 2018 Article 2-s2.0-85049382746 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85049382746&partnerID=40&md5=499445c6905608a5ac9d53990e5af555 https://irepository.uniten.edu.my/handle/123456789/24198 10 2-Jun 1 5 Universiti Teknikal Malaysia Melaka Scopus |
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High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive current (ION) and low IOFF gives a high on-off current ratio (ION/IOFF), which leads to a faster switching speed for the N-type Metal Oxide Semiconductor Field Effect Transistor (NMOS). In order to achieve the best ION/IOFF ratio for a predetermined range of VTH, halo implant was used to adjust the threshold voltage. The finding shows that optimum VTH and ION/IOFF ratio can be achieved by selecting the most suitable halo implant dose in a virtually fabricated 14nm gate-length La2O3-based NMOS device with varying high-k dielectric oxide thickness. � 2018 Universiti Teknikal Malaysia Melaka. All rights reserved. |
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57191706660 |
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57191706660 Mah S.K. Ahmad I. Ker P.J. Noor Faizah Z.A. |
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Mah S.K. Ahmad I. Ker P.J. Noor Faizah Z.A. |
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Mah S.K. Ahmad I. Ker P.J. Noor Faizah Z.A. High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control |
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Mah S.K. |
title |
High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control |
title_short |
High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control |
title_full |
High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control |
title_fullStr |
High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control |
title_full_unstemmed |
High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control |
title_sort |
high-k dielectric thickness and halo implant on threshold voltage control |
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Universiti Teknikal Malaysia Melaka |
publishDate |
2023 |
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1806424250598293504 |
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13.19449 |