High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control

• Main Authors: Mah S.K., Ahmad I., Ker P.J., Noor Faizah Z.A.
• Other Authors: 57191706660
• Format: Article
• Published: Universiti Teknikal Malaysia Melaka 2023

High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive...