Modeling, simulation and optimization of 14nm high-K/metal gate NMOS with taguchi method

Analysis of variance (ANOVA); Electron beam lithography; Metals; MOS devices; Oxide semiconductors; Taguchi methods; ATHENA; ATLAS; Electrical characteristic; Electronics technology; International Technology Roadmap for Semiconductors; MOS-FET; Simulation and optimization; Taguchi optimization metho...

Full description

Saved in:
Bibliographic Details
Main Authors: Mah S.K., Ahmad I., Ker P.J., Tan K.P., Faizah Z.A.N.
Other Authors: 57191706660
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
Tags: Add Tag
No Tags, Be the first to tag this record!
Be the first to leave a comment!
You must be logged in first