Modeling, simulation and optimization of 14nm high-K/metal gate NMOS with taguchi method
Analysis of variance (ANOVA); Electron beam lithography; Metals; MOS devices; Oxide semiconductors; Taguchi methods; ATHENA; ATLAS; Electrical characteristic; Electronics technology; International Technology Roadmap for Semiconductors; MOS-FET; Simulation and optimization; Taguchi optimization metho...
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| Main Authors: | , , , , |
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| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
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| Summary: | Analysis of variance (ANOVA); Electron beam lithography; Metals; MOS devices; Oxide semiconductors; Taguchi methods; ATHENA; ATLAS; Electrical characteristic; Electronics technology; International Technology Roadmap for Semiconductors; MOS-FET; Simulation and optimization; Taguchi optimization method; MOSFET devices |
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