Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

• المؤلفون الرئيسيون: Roslan A.F., Kaharudin K.E., Salehuddin F., Zain A.S.M., Ahmad I., Faizah Z.A.N., Hazura H., Hanim A.R., Idris S.K., Zaiton A.M., Mohamad N.R., Hamid A.M.A.
• مؤلفون آخرون: 57203514087
• التنسيق: Conference Paper
• منشور في: Institute of Physics Publishing 2023

Analysis of variance (ANOVA); Field effect transistors; Graphene transistors; Ion implantation; Ions; Taguchi methods; Bilayer Graphene; Dominant process; Halo implants; Implant energy; L9 orthogonal arrays; Parameter setting; Process parameters; Statistical modeling; Signal to noise ratio