Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate
Annealing; Grain size and shape; Morphology; Scanning electron microscopy; Silica; Silicon; Sodium hydroxide; Sputtering; Zircon; Zirconia; Annealed samples; Annealing temperatures; Anodization process; Anodization time; Anodizations; Fourier transform infrared microscopies; Scherrer equations; ZrO2...
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2023
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my.uniten.dspace-231462023-05-29T14:38:00Z Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate Goh K.H. Lee H.J. Lau S.K. Teh P.C. Ramesh S. Tan C.Y. Wong Y.H. 57069579300 57190622221 57193418930 57193423703 7103211834 16029485400 36605495300 Annealing; Grain size and shape; Morphology; Scanning electron microscopy; Silica; Silicon; Sodium hydroxide; Sputtering; Zircon; Zirconia; Annealed samples; Annealing temperatures; Anodization process; Anodization time; Anodizations; Fourier transform infrared microscopies; Scherrer equations; ZrO2; Thin films This research work studied the effects of various anodization times (5, 10, 15, 20 and 25 min) and various annealing temperatures (500, 600, 700, 800 and 900 �C) on ZrO2 thin film on a Si substrate. The ZrO2 thin film was prepared via sputtering and anodization processes on a Si substrate. The existence of Si, SiO2, m-ZrO2, t-ZrO2 and ZrSiO4 was confirmed by x-ray diffraction, Fourier transform infrared microscopy and Raman spectroscopy. In addition, NaOH was observed as a residue on the surface of the thin film. The grain size and microstrain of both m-ZrO2, and t-ZrO2 were calculated using the Williamson-Hall and/or Scherrer equation. The morphology of samples was examined by scanning electron microscopy. In contrast to unannealed samples, the annealed samples have a smaller grain size, less NaOH, and SiO2 with a smoother surface. However, the SiO2 existed when being annealed at higher temperatures (?800 �C). � 2017 IOP Publishing Ltd. Final 2023-05-29T06:38:00Z 2023-05-29T06:38:00Z 2017 Article 10.1088/2053-1591/aa824e 2-s2.0-85029161357 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029161357&doi=10.1088%2f2053-1591%2faa824e&partnerID=40&md5=82a1ee9ed77770b6109e042ff637bb3b https://irepository.uniten.edu.my/handle/123456789/23146 4 8 86414 Institute of Physics Publishing Scopus |
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Annealing; Grain size and shape; Morphology; Scanning electron microscopy; Silica; Silicon; Sodium hydroxide; Sputtering; Zircon; Zirconia; Annealed samples; Annealing temperatures; Anodization process; Anodization time; Anodizations; Fourier transform infrared microscopies; Scherrer equations; ZrO2; Thin films |
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57069579300 Goh K.H. Lee H.J. Lau S.K. Teh P.C. Ramesh S. Tan C.Y. Wong Y.H. |
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Article |
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Goh K.H. Lee H.J. Lau S.K. Teh P.C. Ramesh S. Tan C.Y. Wong Y.H. |
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Goh K.H. Lee H.J. Lau S.K. Teh P.C. Ramesh S. Tan C.Y. Wong Y.H. Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate |
| author_sort |
Goh K.H. |
| title |
Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate |
| title_short |
Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate |
| title_full |
Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate |
| title_fullStr |
Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate |
| title_full_unstemmed |
Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate |
| title_sort |
investigation of the effect of anodization time and annealing temperature on the physical properties of zro2 thin film on a si substrate |
| publisher |
Institute of Physics Publishing |
| publishDate |
2023 |
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1806424099971399680 |
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13.18916 |