Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate

• Main Authors: Goh, K.H., Lee, H.J., Lau, S.K., Teh, P.C., Ramesh, S., Tan, C.Y., Wong, Y.H.
• Format: Article
• Language: en_US
• Published: 2017

This research work studied the effects of various anodization times (5, 10, 15, 20 and 25 min) and various annealing temperatures (500, 600, 700, 800 and 900 °C) on ZrO2 thin film on a Si substrate. The ZrO2 thin film was prepared via sputtering and anodization processes on a Si substrate. The exist...