Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging
Avalanche photodiodes; Characterization; Diodes; Infrared imaging; Leakage currents; Nitrides; Photodiodes; Photonics; Silica; Silicon nitride; Thermography (imaging); B-staged bisbenzocyclobutene; Current-voltage characterization; InAs; Low noise; Surface leakage currents; Surface passivation; Pass...
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Institute of Electrical and Electronics Engineers Inc.
2023
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my.uniten.dspace-226872023-05-29T14:11:39Z Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging Ker P.J. Marshall A.R.J. Tan C.H. David J.P.R. 37461740800 7401645580 57189468185 25647614700 Avalanche photodiodes; Characterization; Diodes; Infrared imaging; Leakage currents; Nitrides; Photodiodes; Photonics; Silica; Silicon nitride; Thermography (imaging); B-staged bisbenzocyclobutene; Current-voltage characterization; InAs; Low noise; Surface leakage currents; Surface passivation; Passivation The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging. � 2016 IEEE. Final 2023-05-29T06:11:39Z 2023-05-29T06:11:39Z 2016 Conference Paper 10.1109/ICP.2016.7510018 2-s2.0-84981736080 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84981736080&doi=10.1109%2fICP.2016.7510018&partnerID=40&md5=4a99f3d36c39853bf96d280df191d5a3 https://irepository.uniten.edu.my/handle/123456789/22687 7510018 All Open Access, Green Institute of Electrical and Electronics Engineers Inc. Scopus |
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| description |
Avalanche photodiodes; Characterization; Diodes; Infrared imaging; Leakage currents; Nitrides; Photodiodes; Photonics; Silica; Silicon nitride; Thermography (imaging); B-staged bisbenzocyclobutene; Current-voltage characterization; InAs; Low noise; Surface leakage currents; Surface passivation; Passivation |
| author2 |
37461740800 |
| author_facet |
37461740800 Ker P.J. Marshall A.R.J. Tan C.H. David J.P.R. |
| format |
Conference Paper |
| author |
Ker P.J. Marshall A.R.J. Tan C.H. David J.P.R. |
| spellingShingle |
Ker P.J. Marshall A.R.J. Tan C.H. David J.P.R. Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| author_sort |
Ker P.J. |
| title |
Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_short |
Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_full |
Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_fullStr |
Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_full_unstemmed |
Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging |
| title_sort |
surface passivation of inas avalanche photodiodes for low-noise infrared imaging |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2023 |
| _version_ |
1806427411553714176 |
| score |
13.222552 |