Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging

Avalanche photodiodes; Characterization; Diodes; Infrared imaging; Leakage currents; Nitrides; Photodiodes; Photonics; Silica; Silicon nitride; Thermography (imaging); B-staged bisbenzocyclobutene; Current-voltage characterization; InAs; Low noise; Surface leakage currents; Surface passivation; Pass...

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Bibliographic Details
Main Authors: Ker P.J., Marshall A.R.J., Tan C.H., David J.P.R.
Other Authors: 37461740800
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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Summary:Avalanche photodiodes; Characterization; Diodes; Infrared imaging; Leakage currents; Nitrides; Photodiodes; Photonics; Silica; Silicon nitride; Thermography (imaging); B-staged bisbenzocyclobutene; Current-voltage characterization; InAs; Low noise; Surface leakage currents; Surface passivation; Passivation