Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode

A high performance lateral silicon photodiode was designed on a Silicon-on-insulator (SOI)-based substrate with SiGe/Si quantum dot technology. The device has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. Five device p...

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Bibliographic Details
Main Authors: Menon P.S., Tasirin S.K., Ahmad I., Abdullah S.F.
Other Authors: 57201289731
Format: Conference Paper
Published: Trans Tech Publications 2023
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